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2SK3437
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3437
DC-DC Converter, Relay Drive and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.74 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC (Note 1) Drain current Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 30 80 252 10 8 150 -55~150 A W mJ A mJ C C Unit V V V
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 83.3 Unit C/W C/W
Note 1:
Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.41 mH, RG = 25 , IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
JEDEC JEITA TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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2SK3437
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton ID = 5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 15 V, ID = 5 A Min 30 600 3.0 2.0 Typ. 0.74 4.5 1200 10 130 13 40 8 Max 10 100 5.0 1.0 pF Unit A V A V V S
10 V VGS 0V 10 VOUT

ns

RL = 60 VDD 300 V -

nC
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
Duty < 1%, tw = 10 s =
50 28 16 12
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1600 17 Max 10 30 -1.7 Unit A A V ns C
Marking
K3437
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3437
ID - VDS
10 Common source Tc = 25C Pulse test 15 10 7.75 16 20 Common source Tc = 25C Pulse test
ID - VDS
15 10 8.5
Drain current ID (A)
6
7.25 7.0
Drain current ID (A)
8
7.5
12
8.0
4
6.75 6.5
8
7.5 7.25 7.0
2
VGS = 6.0 V
4
6.5 VGS = 6.0 V
0 0
4
8
12
16
20
0 0
10
20
30
40
50
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
12
VDS - VGS
20 Common source Tc = 25C Pulse test
10
(V)
16
Common source VDS = 20 V Pulse test
Drain current ID (A)
8
Drain-source voltage VDS
12 ID = 10 A 8
6
4
25
2
100
4
5 2.5
Tc = -55C
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
100 Common source VDS = 20 V Pulse test 100 Common source Tc = 25C Pulse test
RDS (ON) - ID
Forward transfer admittacne Yfs
(S)
10 Tc = -55C 25 100
Drain-source on resistance RDS (ON) ()
10
1
1
VGS = 10, 15 V
0.1 0.1
1
10
100
0.1 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
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2SK3437
RDS (ON) - Tc
2.5 Common source VGS = 10 V Pulse test 100
IDR - VDS (A)
Common source Tc = 25C Pulse test
Drain-source on resistance RDS (ON) ()
2.0
ID = 10 A 5 2.5
Drain reverse current IDR
10
1.5
1.0
1
0.5
10 0.1 0 5 -0.2 3 -0.4 1 -0.6
VGS = 0, -1 V -0.8 -1 -1.2
0 -80
-40
0
40
80
120
160
Channel temperature
Tc (C)
Drain-source voltage VDS
(V)
Capacitance - VDS
10000 6
Vth - Tc Gate threshold voltage Vth (V)
Common source VDS = 10 V ID = 1 mA Pulse test
5
(pF)
1000
Ciss
4
Capacitance C
3
100 Coss
2
10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 1000 Crss
1
0 -80
-40
0
40
80
120
160
Channel temperature
Tc (C)
Drain-source Voltage
VDS (V)
PD - Tc
100 500
Dynamic input/output characteristics
Common source ID = 10 A Tc = 25C Pulse test VDS 300 VDD = 100 V 200 400 200 VGS 100 4 8 12 20
Drain Power dissipation PD (W)
(V)
80
400
16
40
20
0 0
40
80
120
160
200
0 0
10
20
30
0 40
Channel temperature
Tc (C)
Total gate charge Qg
(nC)
4
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Gate-source voltage
60
Drain-source Voltage VDS
VGS (V)
2SK3437
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-a)
1
Duty = 0.5 0.2 0.1
0.1
0.05 0.02 0.01
0.01
Single pulse
0.001 10
100
1m
10 m
100 m
1
10
Pulse width
tw
(S)
Safe operating area
100 400
EAS - Tch
(mJ) EAS Avalanche energy
300 100 s *
ID max (pulsed) *
10
ID max (continuous) *
ID
(A)
1 ms *
200
Drain current
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C
50
75
100
125
150
Channel temperature (initial)
Tch
(C)
Curves must be derated linearly with increase in temperature. 0.01 1 10 VDSS max 100 1000
15 V -15 V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 90 V, L = 4.41 mH
AS =
Wave form
1 B VDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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